C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
356/166, 356/178
C23C 16/04 (2006.01) C23C 16/505 (2006.01) C23C 16/509 (2006.01) H01L 21/205 (2006.01) H01L 21/31 (2006.01)
Patent
CA 1333786
A process for forming a dielectric patterned layer of any desired geometry on a selected substrate which includes vapor depositing selected reactants on said substrate only in areas thereon which are coextensive with the surface area of an adjacent metal electrode pattern.
589157
Angerstein Michael D.
Bhaskar Eldurkar V.
Leban Marzio A.
Hewlett-Packard Company
Sim & Mcburney
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