Process for producing semiconductor device

Details Process for producing semiconductor device Process for producing semiconductor device

C - Chemistry, Metallurgy

09

K

C09K 3/14 (2006.01) H01L 21/304 (2006.01) H01L 21/3105 (2006.01)

Patent

CA 2605696

An abrasive for semiconductor substrate comprises a slurry which comprises a medium and cerium oxide particles dispersed in said medium. The cerium oxide particles include polycrystalline cerium oxide particles constituted of crystallites, having crystal grain boundaries and being capable of forming a new surface. The particles have crystal grain boundaries with a diameter of a middle value of from 100 nm to 1500 nm. The crystallites have a diameter with a middle value of from 5 nm to 250 nm.

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