Process for producing semiconductor device

Details Process for producing semiconductor device Process for producing semiconductor device

C - Chemistry, Metallurgy

09

K

C09K 3/14 (2006.01) H01L 21/304 (2006.01) H01L 21/3105 (2006.01)

Patent

CA 2315057

In order to polish the surface of an SiO2 insulating film at high speed without any scratch, an abrasive containing a slurry prepared by dispersing in a medium either cerium oxide particles constituted by two or more crystallites and having grain boundaries or a bulk density of more than 6.5 g/cm3 or abrasive grains having pores. A method of polishing a wafer using the abrasive and a method of producing a semiconductor device are also disclosed.

Selon l'invention, pour polir la surface d'un film isolant de SiO¿2? à haute vitesse sans former des rayures, on utilise un abrasif contenant une suspension épaisse préparée par dispersion, dans un milieu, de particules d'oxydes de cérium constituées par au moins deux cristallites et présentant des joints de grain ou une masse volumique supérieure à 6,5 g/cm?3¿, ou bien des grains abrasifs présentant des pores. L'invention concerne également un procédé de polissage de tranche au moyen d'un tel abrasif et un procédé de production d'un dispositif à semi-conducteur.

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