C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/195
C01B 21/068 (2006.01)
Patent
CA 1308231
Abstract: The invention provides a process for forming silicon nitride containing little or no silicon carbide. The process involves producing a uniform dispersion of finely divided silica particles in a polymer, heating the polymer/ silica dispersion in a non-oxidizing atmosphere to carbonize the polymer, and heating the resulting carbonized product to a temperature in the range of 1300-1800°C in a non-oxidizing nitrogen-containing atmosphere. This latter heating step is carried out in the presence of a metal oxide (preferably alumina) which is capable, in the reaction conditions, of reducing the amount of silicon carbide formed as an undesired by-product.
556103
Jain Mukesh
Nadkarni Sadashiv
Alcan International Limited
Jain Mukesh
Kirby Eades Gale Baker
Nadkarni Sadashiv
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