Process for producing thin-film transistors on an insulating...

Details Process for producing thin-film transistors on an insulating... Process for producing thin-film transistors on an insulating...

H - Electricity

01

L

356/126, 352/82

H01L 21/84 (2006.01) H01L 21/336 (2006.01) H01L 29/45 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1200324

ABSTRACT OF THE DISCLOSURE Process for the production of thin-film transistors on an insulating substrate, wherein it comprises the following stages: - deposition on an insulating. substrate of a coating of a metal able to form a silicide in contact with a silicon, - photoengraving of the first metal coating to define the sources, drains and channels for the future transistors and various connections between the transistors, - deposition of a silicon coating by reactive gaseous phase plasma, which leads to the appearance of a silicide coating in contact with the metal of the photoengraved coating, - deposition of a silica coating by reactive gaseous phase plasma, - deposition of a conductive coating by reactive gaseous phase plasma, - photoengraving of the conductive coating - silica coating - silicon coating system, without etching the silicide covering the photoengraved metal coating. Application to the production of large-area electronic components used e.g. in the production of flat display screens and the like.

418167

Affiliated with

Also associated with

Rating

Process for producing thin-film transistors on an insulating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing thin-film transistors on an insulating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing thin-film transistors on an insulating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1335268