C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/40 (2006.01) C23C 14/00 (2006.01) C23C 14/08 (2006.01) H01L 21/316 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2131791
2131791 9318200 PCTABS00025 An in-situ process for preparing thin films which contain volatile and relatively involatile oxides is disclosed, in particular, crystalline thin films of oxides of superconductors or precursors,wherein separate sources of the volatile and relatively involatile oxides during deposition of the thin film are employed.
Bennett Jones Llp
E. I. Du Pont de Nemours And Company
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