C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/179
C01B 33/107 (2006.01)
Patent
CA 1189286
ABSTRACT OF THE DISCLOSURE: The present invention relates to a process for purifying chlorosilanes of impurities contained therein. These impurities are boron compounds and compound of metals. This process is characterized in that the chlorosilanes in liquid phase are brought into intimate contact with a compound which contains one or several Si-O-Si linkages in the presence of hydrogen halide and subsequently the chlorosilane thus purified is separated from the non-volatile boron or metal compounds thereby formed by distillation. Purified SiHCl3 according the within process is needed to manufacture polycrystalline or monocrystalline silicon which is used for semi-conductor purposes. Purified SiCl4 without metal compounds is needed for the production of optical filaments.
393042
Kotzsch Hans-Joachim
Matthes Reinhard
Vahlensieck Hans-Joachim
Dynamit Nobel Aktiengesellschaft
Robic Robic & Associes/associates
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