C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
C01B 7/19 (2006.01)
Patent
CA 2076372
2076372 9113024 PCTABS00007 A process for manufacturing high purity anhydrous hydrogen fluoride (HF) having low levels of oxidizable impurities by electrolytically oxidizing the impurities. Specifically, trivalent arsenic impurity in the anhydrous hydrogen fluoride is oxidized to a non-volatile pentavalent arsenic compound. The resultant mixture is distilled to recover high purity anhydrous hydrogen fluoride with low levels of arsenic impurity.
Barker Craig Thompson
Edwards Eileen Genieve
Freire Francisco Jose
Howell Jon L.
Motz Kaye Lamarr
E.i. Du Pont de Nemours And Company
Sim & Mcburney
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