Process for selective formation of iii -v group coumpound film

Details Process for selective formation of iii -v group coumpound film Process for selective formation of iii -v group coumpound film

C - Chemistry, Metallurgy

30

B

148/3.5

C30B 29/40 (2006.01) H01L 21/20 (2006.01)

Patent

CA 1339909

A process for selective formation of a III-V group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group III atoms of Periodic Table and a starting material for supplying the group V atoms of Periodic Table, on a substrate having a non-nucleation surface (SNDS) with small nucleation density and a nucleation surface (SNDL) with a larger nucleation density (NDL) than the nucleation density (NLS) of said non-nucleation surface (SNDS) and a large area sufficient for a number of nuclei to be formed, and forming selectively a III-V group compound film only on said nucleation surface (SNDL).

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