C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/18 (2006.01) C07F 1/00 (2006.01) C23F 1/12 (2006.01) H01L 21/285 (2006.01) H01L 21/3213 (2006.01) H01L 21/768 (2006.01)
Patent
CA 2058483
A process is provided for selectively depositing copper films on metallic or other electrically conducting portions of substrate surfaces by contacting the substrate at a temperature from 110° to 190°C with a volatile organometallic copper complex, in the gas phase, represented by the structural formula: Image where R1 and R3 are each independently C1-C8 perfluoroalkyl, R2 is H or C1-C8 perfluoroalkyl and L is carbon monoxide, an isonitrile, or an unsaturated hydrocarbon ligand containing at least one non-aromatic unsaturation.
Divulgation d'un processus pour déposer sélectivement des pellicules de cuivre sur des parties conductrices de l'électricité en métal ou en une autre matière de surfaces de substrat en mettant en contact le substrat, à une température variant entre 110 et 190 degrés C, avec un complexe de cuivre organométallique volatil, en phase gazeuse, représenté par la formule structurale : Image , dans laquelle R1 et R3 sont indépendamment l'un de l'autre un perfluoroalkyle en C1-C8, R2 est un atome d'hydrogène ou un perfluoroalkyle en C1-C8, et L est un monoxyde de carbone, un isonitrile ou un ligand hydrocarbure non saturé contenant au moins une non-saturation non aromatique.
Dyer Paul N.
Norman John A. T.
Air Products And Chemicals Inc.
Mcfadden Fincham
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