Process for the deposition of polycrystalline silicon from...

Details Process for the deposition of polycrystalline silicon from... Process for the deposition of polycrystalline silicon from...

C - Chemistry, Metallurgy

01

B

117/85

C01B 33/00 (2006.01) C23C 16/01 (2006.01)

Patent

CA 1092905

ABSTRACT OF THE DISCLOSURE A process for deposition of polycrystalline sili- con from the gas phase on heated carrier bodies of carbon, which comprises assembling the carrier bodies from extreme- ly thin flexible graphite foils, heating the bodies to deposition temperature, while contacting them with a gas- eous mixture containing a decomposable silicon compound and, if desired, hydrogen, and separating the deposited silicon from the carrier body, after termination of the deposition process, by mechanical means. The polycrystal- line silicon can either be deposited in the form of shaped hollow bodies for use as laboratory equipment or in the semiconductor industries, or it may be processed to mono- crystalline materials.

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