C - Chemistry – Metallurgy – 25 – B
Patent
C - Chemistry, Metallurgy
25
B
204/65, 148/2.1
C25B 1/00 (2006.01) C23C 16/448 (2006.01) C30B 25/00 (2006.01) C30B 29/40 (2006.01)
Patent
CA 2010482
Many devices, such as those based on III-V semiconductor materials, are producedutilizing gases such as arsine that require careful handling of compressed gas cylinders. This care has engendered a search for alternate approaches. It has been found that the use of electrochemically generated gases such as arsine yields anefficient, pure source of such gases without necessitating the storage of large gas quantities. Thus, a device fabrication procedure including in situ electrochemical generation of gases such as arsine is particularly useful.
De nombreux dispositifs, comme ceux à base de semi-conducteurs III-V, sont produits à l'aide de gaz, comme l'arsine, nécessitant la manipulation prudente de bouteilles de gaz comprimés. Ces inconvénients ont conduit à la recherche de solutions de remplacement. Ainsi, on a constaté que la production électrochimique de gaz, notamment d'arsine, représentait une source de gaz n'exigeant pas le stockage de grandes quantités de ces derniers. Un procédé de fabrication d'un dispositif, permettant de produire par voie électrochimique des gaz, comme l'arsine, se révèle donc particulièrement utile.
Cadet Gardy
Mitchell James Winfield
Valdes Jorge Luis
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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