Process for the localised etching of silicone crystals

Details Process for the localised etching of silicone crystals Process for the localised etching of silicone crystals

C - Chemistry, Metallurgy

09

K

356/165, 149/17

C09K 13/00 (2006.01) C04B 41/53 (2006.01) H01L 21/033 (2006.01) H01L 21/306 (2006.01) H01L 21/308 (2006.01) H01L 29/00 (2006.01)

Patent

CA 1036473

ABSTRACT OF THE DISCLOSURE This invention covers the use of an etching agent in which for each 100 g of HNO3 there are used 20 g of H2O, 4 g of HF and 110 g of CH3COOH, for the localised etching of silicon crystals at about 22°C. The process is preferably carried out using an etching mask of SiO2, Si2N4, Mo, Ta or Pt. The Si surface to be etched is (100)-orientated.

212778

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