Process for the manufacture of coarsely crystalline to...

C - Chemistry – Metallurgy – 30 – B

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148/1.3

C30B 11/02 (2006.01) C30B 15/06 (2006.01) C30B 15/36 (2006.01) C30B 33/00 (2006.01)

Patent

CA 1208525

PROCESS FOR THE MANUFACTURE OF COARSELY CRYSTALLINE TO MONOCRYSTALLINE SHEETS OF SEMICONDUCTOR MATERIAL ABSTRACT OF THE DISCLOSURE The invention provides a process for the manufacture of coarsely crystalline to monocrystalline sheets and/or plates of semiconductor material of preferred orientation. A meniscus of molten semiconductor material comes in contact with a moving, cooler substrate of the same coarsely crystalline to monocrystalline semiconductor material, during which, while transferring the preferred orientation, a thin sheet of the semiconductor material is pulled onto the substrate and, after cooling, becomes detached from the support. The substrate can be reused as often as desired.

407272

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Process for the manufacture of coarsely crystalline to... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the manufacture of coarsely crystalline to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the manufacture of coarsely crystalline to... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1186278

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.