Process for the manufacture of large surface area bonded to...

Details Process for the manufacture of large surface area bonded to... Process for the manufacture of large surface area bonded to...

H - Electricity

01

L

356/178, 356/197

H01L 21/223 (2006.01) C30B 11/00 (2006.01) C30B 11/12 (2006.01) H01L 21/383 (2006.01)

Patent

CA 1087758

ABSTRACT OF THE DISCLOSURE Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises de- positing silicon to a thickness of from 30 to 500 µm onto panel-shaped substrates of glassy carbon (a glass-like car- bon obtained by carbonizing a spatially cross-linked synthe- tic resin) that are heated by direct passage of and electric current to temperatures above the melting point of silicon, and thereafter cooling the silicon to a temperature below its melting point in the direction from its surface toward the substrate. The invention also comprises the silicon panels so made which are especially useful in the manufacture of solar cells.

288541

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