C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/40 (2006.01) C30B 25/02 (2006.01) C30B 33/00 (2006.01)
Patent
CA 2225620
A process for coating the surface of a single crystal with a magnesium oxide film which comprises contacting an organomagnesium compound having an oxygen to magnesium atomic ratio of 1:1 with the crystal heated to a temperature ranging from 300 ~C to 450 ~C in the absence of oxygen. The magnesium oxide film thus produced has a negligible amount of residual carbon.
L'invention concerne un procédé d'application d'un film sur la surface d'un monocristal, constitué d'oxyde de magnésium. Ce procédé consiste à mettre en contact un composé organométallique ayant un rapport atomique oxygène sur magnésium de 1:1, puis à chauffer le cristal à une température dans la plage de 300 ·C à 450 ·C en absence d'oxygène. Le film d'oxyde de magnésium ainsi produit contient une quantité de carbone résiduel qui est négligeable.
Kim Yunsoo
Koh Wonyong
Ku Sujin
Cassan Maclean
Korea Research Institute Of Chemical Technology
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