C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/24, 148/36
C30B 35/00 (2006.01) H01C 7/04 (2006.01) H01C 7/06 (2006.01) H01C 17/232 (2006.01) H01C 17/26 (2006.01)
Patent
CA 1042323
ABSTRACT OF THE DISCLOSURE A method of heat-treating a metal film for use as a resistor and the resulting product. The method involves heating the film in an oxidizing atmosphere for forming a protective oxide film on the metal film, removing adsorbed foreign elements therefrom, and changing the crystal structure thereof, and for a time sufficient to change the initial temperature coefficient of resistance to a desired value. The temperature for the heating when the coefficient is to be changed in the positive direction is a temperature in the range between the first and second critical temperature for heat treating in and above the third critical temperature. When the coefficient is to be changed in the negative direction, the temperature is between the second and the third critical temperatures for heat treating in air.
233159
Hamaguchi Hachiro
Mori Kenji
Shimizu Sajiro
Takahama Hiroshi
Yasuda Toshitaka
Hamaguchi Hachiro
Mori Kenji
Na
Shimizu Sajiro
Takahama Hiroshi
LandOfFree
Process for the preparation of metallic film resistors by... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for the preparation of metallic film resistors by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the preparation of metallic film resistors by... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-235912