Process for the preparation of organosilicon compounds...

Details Process for the preparation of organosilicon compounds... Process for the preparation of organosilicon compounds...

C - Chemistry, Metallurgy

07

F

C07F 7/18 (2006.01) C07F 7/08 (2006.01) C08G 77/38 (2006.01)

Patent

CA 2116569

2116569 9305051 PCTABS00020 Organosilicium compounds that contain SiC-bonded organic residues with at least one epoxy group per residue are produced by epoxidizing organosilicium compounds that contain SiC-bonded organic residues with at least one carbon-carbon double bond per residue, with peracetic acid that contains acetic acid and catalytic amounts of strong acid, in the presence of organic solvents and acid-binding substances. The strong acid is bound with an at least equivalent amount of a base before epoxidizing with peracetic acid. During epoxidizing, 0.4 to 0.8 val acid-binding substances per mole of the total amount of acid, including peracetic acid and acetic acid, are present.

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