Process for the production of an inversely operating transistor

Details Process for the production of an inversely operating transistor Process for the production of an inversely operating transistor

H - Electricity

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356/89

H01L 21/265 (2006.01) H01L 29/10 (2006.01) H01L 29/36 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1061010

C A N A D A ABSTRACT OF THE DISCLOSURE A process is described for the production of an inversely operating transistor in which the minority charge carriers injected into the base zone are accelerated, for which purpose the base zone is doped by means of ion implantation. This produces a reduced base transit time of the charge carriers, and thus an increased switching speed.

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