C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 23/00 (2006.01) C30B 23/02 (2006.01)
Patent
CA 2583592
The invention relates to a method and a device for producing gallium nitride or gallium aluminium nitride monocrystals. The invention is characterised in that gallium or gallium and aluminium are evaporated at a temperature above that of the growing crystal, but at least at 1000 ~C and that a gaseous stream consisting of nitrogen gas, hydrogen gas, inert gas or a combination of said gases is conducted over the surface of the molten metal, in such a way that said stream over the molten metal surface prevents the nitrogen precursor from coming into contact with the molten metal.
L'invention concerne un procédé et un dispositif pour produire du nitrure de Gallium ou un monocristal de nitrure d'aluminium et de gallium. L'objectif de l'invention est d'effectuer l'évaporation du gallium ou de l'aluminium et du gallium à une température supérieure à la température du cristal grandissant, mais effectuée à au moins 1000 °C, et de diriger un flux gazeux comprenant de l'azote, de l'oxygène, un gaz inerte ou une combinaison de ces gaz sur une surface de bain de fusion. A cet effet, le flux gazeux évite ainsi un contact du précurseur de l'azote avec le bain de fusion sur la surface du bain de fusion.
Dadgar Armin
Krost Alois
Azzurro Semiconductors Ag
Fetherstonhaugh & Co.
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