C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/1
C01B 25/08 (2006.01) C01B 25/06 (2006.01) C01G 28/00 (2006.01) C09K 11/70 (2006.01) C22C 1/00 (2006.01) H01L 33/00 (2006.01)
Patent
CA 1043534
ABSTRACT OF THE DISCLOSURE An improved process for the production of compact polycrystal- line AIII - BV compounds such as GaP which are useful semiconductors through direct synthesis from the components in a closed horizontal system, in which at least one of the components has a substantially higher partial vapor pressure over the molten compound being produced than do the other components. In carrying out the process, the components which are more difficult to vaporize are heated in a narrow reaction zone to a temperature in the range of 100 to 500°C below the congruent melting temperature of the compound being produced while the pressure of the easily vaporized components is adjusted so that it amounts to between 0.14 and 0.33 times the decomposition vapor pressure of the compound being produced and thus to 50 to 120 times the decom- position vapor pressure of the solution of the compound being produced in the components which are difficult to vaporize at the reaction temperature.
197051
Raab Gunter
Zeuch Klaus
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