Process for the production of si by reduction of sicl4 with...

Details Process for the production of si by reduction of sicl4 with... Process for the production of si by reduction of sicl4 with...

C - Chemistry, Metallurgy

01

B

C01B 33/033 (2006.01) C01B 33/037 (2006.01) C30B 15/00 (2006.01) C30B 29/06 (2006.01)

Patent

CA 2601333

The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCU is converted to Si metal by contacting gaseous SiCU with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si- bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiCU towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.

L~invention concerne la fabrication de silicium de haute pureté utilisé comme matériau de base pour la fabrication par ex. de cellules solaires en silicium cristallin. Du SiCU est converti en métal Si en mettant en contact le SiCU gazeux avec du Zn liquide, ce par quoi l'on obtient un alliage contenant du Si et du chlorure de Zn, lequel est séparé. L~alliage contenant du Si est alors purifié à une température supérieure à la température d~ébullition de Zn. Ce procédé ne nécessite pas de technologies compliquées et permet de préserver la grande pureté du SiCU dans le produit final, du fait que le seul réactif est Zn, lequel peut être obtenu avec un grand degré de pureté et peut être continuellement recyclé.

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