Process for the production of silicon nitride

Details Process for the production of silicon nitride Process for the production of silicon nitride

C - Chemistry, Metallurgy

01

B

C01B 21/068 (2006.01)

Patent

CA 2117129

ABSTRACT OF THE DISCLOSURE PROCESS FOR THE PRODUCTION OF SILICON NITRIDE A process for the production of substantially crystalline silicon nitride comprising heating a mixture of ammonia and a silicon halide by means of an electric plasma formed in a stream of non-oxidising gas is described. Energy is transferred to the stream of gas at a rate of at least 30 kilowatts per mole of silicon halide per minute and at least 25 kilowatts. In a preferred embodiment reactant gases are caused to recirculate so that the recirculation ratio (RR) is greater than 2.5 where RR is defined by Image wherein Mn = mass flow of gas stream through an inlet nozzle R = internal radius of the reactor into which said nozzle flows M = mass flow at a distance 4R downstream from the inlet nozzle Rn = radius of inlet nozzle Dn = density of gas stream passing through the inlet nozzle D = density of gases in reactor at a distance 4R downstream from the inlet nozzle. The degree of crystallinity of the silicon nitride prepared according to this method is very high and, typically greater than 85%.

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