C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/326
C01B 33/02 (2006.01) C01B 33/035 (2006.01)
Patent
CA 1310472
AN IMPROVED PROCESS AND APPARATUS FOR THE PRODUCTION OF ULTRA HIGH PURITY POLYCRYSTALLINE SILICON ABSTRACT OF THE DISCLOSURE The present invention is directed to an improved process for producing ultra high purity polycrystalline silicon which process provides for increased production capacity and electrical power efficiency. The process comprises recycling the exhaust gases of the silane pyrolysis reactor after the gases have been preferably first cooled and filtered utilizing a pocket-type reaction zone enclosure having a particular effective radius thereby effectively decreasing the amount of silicon powder formation. Preferably, the rate of recycle flow is sufficient to entrain silicon powder in the reactor and remove the powder from the reactor with the exiting exhaust gases.
569241
Breneman William C.
Flagella Robert N.
Gaston Jon M.
Hagan David W.
Advanced Silicon Materials Inc.
Sim & Mcburney
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