C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/327
C01B 33/037 (2006.01)
Patent
CA 1336354
An improved process for the removal of impurities from silicon comprises melting powder of granulate of impure silicon, contacting the silicon melt in a large-surface area, thin film contact with a silicon-resistant material to which the impurities adhere and draining the silicon off the silicon-resistant material thereby separating impurities adhering to the silicon-resistant material from the silicon drained therefrom.
574929
Gebauer Klaus
Kurz Gunter
Schwirtlich Ingo
Aktiengesellschaft Bayer
Fetherstonhaugh & Co.
LandOfFree
Process for the removal of impurities from silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for the removal of impurities from silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the removal of impurities from silicon will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1234563