Process for the removal of specific crystal structure...

Details Process for the removal of specific crystal structure... Process for the removal of specific crystal structure...

H - Electricity

01

L

356/178, 356/191

H01L 21/302 (2006.01) B24B 31/00 (2006.01) H01L 21/304 (2006.01) H01L 21/322 (2006.01)

Patent

CA 1154176

PROCESS FOR THE REMOVAL OF SPECIFIC CRYSTAL STRUCTURE DEFECTS FROM SEMICONDUCTOR DISCS ABSTRACT OF THE DISCLOSURE The invention relates to an improved method for removing point defects and point defect clusters from semiconductor discs, which defects impair the quality of electronic components or structural elements made from such discs. According to the invention, prior to polishing, the semiconductor discs are immersed in a bath containing grains moving in a streaming carrier medium of the bath. One side of the discs are then polished and thereafter the discs are subjected to oxidation processes whereby stacking faults are induced in the rear side of the discs. These stacking faults have an excellent gettering effect on the point defects.

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