Process for the selective growth of gaas

Details Process for the selective growth of gaas Process for the selective growth of gaas

C - Chemistry, Metallurgy

30

B

345/33, 148/3.8

C30B 29/42 (2006.01) H01S 5/227 (2006.01) H01S 5/223 (2006.01) H01S 5/32 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1314088

SZ 9-88-008 ABSTRACT The process is particularly useful in the fabrication of GaAs quantum well (QW) laser diodes. Starting point is a ridge-patterned (100)-substrate (21), the crystal orien- tation of the sidewalls, e.g., (411A)-oriented, being different from that of the horizontal top. The sidewall facets thus have a lower Ga incorporation rate. In a molecular beam epitaxy (MBE) system, the lower AlGaAs cladding layer (22) is first grown, followed by the high-temperature growth of the active GaAs QW (23). Due to diffusion and desorption processes, the GaAs thickness at the sidewalls is smaller than on the hor- izontal top of the ridge. During a short growth inter- rupt, the GaAs completely desorps from the sidewall facets. With the subsequent growth of the upper cladding layer (24), the QW becomes laterally embedded in higher bandgap material providing for lateral electric confine- ment.

601602

Affiliated with

Also associated with

Rating

Process for the selective growth of gaas does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the selective growth of gaas, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the selective growth of gaas will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1219413