Process for the vapor deposition of polysilanes

G - Physics – 03 – F

Patent

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96/215, 117/81

G03F 7/16 (2006.01) G03F 7/075 (2006.01)

Patent

CA 1334911

Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.

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