C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/181
C23C 8/36 (2006.01) C23C 16/455 (2006.01) C23C 16/509 (2006.01) H01J 37/32 (2006.01) C23C 16/44 (2006.01)
Patent
CA 1212356
ABSTRACT OF THE DISCLOSURE A system for introducing, confining and evacuating process gases adjacent the cathode region of glow discharge deposition apparatus, said apparatus adapted to deposit at least one layer of semiconductor material onto a substrate The deposition apparatus includes at least one dedicated deposition chamber into which process gases are introduced for glow discharge disassociation into species. The system of the present invention includes a baffling manifold adjacent the cathode said manifold adapted to substantially reduce areas of localized rarification and compression of process gases flowing through the plasma region for substan- tially preventing adjacent stagnant and rapidly moving areas of process gases from forming non- uniform flow patterns as the semiconductor layer is deposited on the surface of the substrate, The system is also adapted to expose the entire transverse width of the substrate for the deposition of semiconductor material there- unto.
439226
Hoffman Kevin R.
Laarman Timothy D.
Nath Prem
Energy Conversion Devices Inc.
Gowling Lafleur Henderson Llp
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