C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/58 (2006.01) C23C 14/00 (2006.01) C23C 14/14 (2006.01) C23C 14/56 (2006.01)
Patent
CA 2166174
A process of forming films of metallic compounds on a substrate is disclosed, which essentially comprises producing a sputtered ultra-thin film and transforming this film into one of a metallic compound such as a metal oxide by exposing it to a reactive gas plasma. This operation is repeated until the resulting film product gains a desired thickness. An apparatus for carrying the process into practice is also disclosed, which comprises a sputtering electrode in a film-forming zone for producing a sputtered film of metal or metallic compound and a plasma generator in a plasma exposure zone to which the sputtered film is exposed to transform into one of a metallic compound. The two zones are respectively shielded against mutual interference.
Ito Takashi
Narisawa Seishi
Okada Katsuhisa
Tamoto Junichi
Gowling Lafleur Henderson Llp
Shincron Co. Ltd.
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