Process of diamond growth from c70

Details Process of diamond growth from c70 Process of diamond growth from c70

C - Chemistry, Metallurgy

30

B

C30B 29/04 (2006.01) C23C 16/27 (2006.01) C30B 23/00 (2006.01) C30B 25/00 (2006.01)

Patent

CA 2213316

A method of growing single crystal diamonds in excess of 10 µm in diameter from industrial diamond "seeds" having mean diameters of approximately 1.5 µm is disclosed. The diamonds are grown by exposing the seed diamonds to C70 in the presence of reducing agents such a phosphorus or selenium in evacuated cells at moderate temperatures and pressures.

L'invention porte sur une technique permettant de faire croître des diamants mono-cristallins de plus de 10 µm en diamètre à partir de germes de diamants industriels d'un diamètre moyen d'environ 1,5 µm. On assure la croissance de ces diamants en exposant les germes à C¿70? en présence d'agents réducteurs tels que du phosphore ou du sélénium dans des cellules où le vide a été fait, à des températures et sous des pressions modérées.

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