Process of forming a negative pattern in a photoresist layer

Details Process of forming a negative pattern in a photoresist layer Process of forming a negative pattern in a photoresist layer

H - Electricity

05

K

96/256

H05K 3/06 (2006.01) G03F 7/022 (2006.01) G03F 7/26 (2006.01)

Patent

CA 1275846

ABSTRACT OF THE DISCLOSURE: A process of forming high resolution negative patterns in a photoresist layer, comprises the steps of (a) coating a substrate with a layer of a photosensitive resin comprising a polymer, preferably a phenolic polymer, mixed or bound to a photoactive compound such as a diazoquinone, (b) exposing the layer to ultraviolet or visible light through a mask, (c) treating the layer with a silicon compound (e.g. hexamethyldisilazane) and (d) dry developing by plasma etching (e.g. an oxygen plasma) to remove the non- irradiated portions of the layer. The silicon compound is able to diffuse selectively into the irradiated portions of the layer and fix in these portion. By dry etching, a silicon oxide etch mask is formed which protects these irradiated portions efficiently throughout the process. The process is useful in the manufacture of semiconductor devices, including integrated circuits.

493257

Affiliated with

Also associated with

Rating

Process of forming a negative pattern in a photoresist layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of forming a negative pattern in a photoresist layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of forming a negative pattern in a photoresist layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1218545