Process of lift-off of material

Details Process of lift-off of material Process of lift-off of material

H - Electricity

01

F

352/29.2

H01F 41/14 (2006.01) C23F 1/14 (2006.01) G11B 5/31 (2006.01) G11B 5/48 (2006.01) H01F 41/18 (2006.01) H01F 41/34 (2006.01)

Patent

CA 1213044

ABSTRACT Process for lift-off fabrication of sputtered dielec- tric or nonmagnetic gap materials and thin-film heads for either a single-element thin-film head or side-by-side el- ements on a thin-film head. The lift-off process uti- lizes a copper coating that is removed by a twenty percent solution of ammonium persulfate with a pH n the range of seven to nine to assure complete removal of gap material from the back closure of the thin-film head with- out damage to the underlying permalloy. The process can also be utilized to obtain a multiple layer deposits on a single thin-film had by repeating the steps of the pro- cess. The process provides for a clean hole, no dielec- tric on the surface nor any attacking on the magnetick material.

464112

Affiliated with

Also associated with

Rating

Process of lift-off of material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of lift-off of material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of lift-off of material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1261487