C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/196
C01B 33/04 (2006.01)
Patent
CA 1047735
PROCESS FOR MAKING SILANE ABSTRACT OF THE DISCLOSURE There is a process for manufacturing SiH4 by the disproportionation or redistribution of HSiCl3 which comprises feeding HSiCl3 into a bed of insoluble solid anion exchange resin containing tertiary amino or quaternary ammonium groups bonded to carbon therein, refluxing the HSiCl3 to vaporize dispropor- tionated products to the upper portion of the bed and condensing liquid SiCl4 from the area in which HSiCl3 is refluxed, maintaining the temperature at the top of the bed above the boiling point of SiH4 and below the boiling point of H3SiCl, and recovering SiH4 from the bed substantially free of chlorosilanes. S P E C I F I C A T I O N 1.
218542
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