Process of reclamation of soi substrate and reproduced...

Details Process of reclamation of soi substrate and reproduced... Process of reclamation of soi substrate and reproduced...

H - Electricity

01

L

H01L 21/02 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2260489

An SOI substrate 1 having semiconductor base plate 2 and a single crystal semiconductor layer 4 with interposition of an insulating layer 3 is prepared is reclaimed through a first removal step of removing the single crystal semiconductor layer 4, and a second removal step of removing selectively the insulation layer 3. Thereby the loss of the thickness of the base plate in the reclamation is decreased in the reproduction of the SOI substrate.

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