Process of reducing density of fast surface states in mos...

Details Process of reducing density of fast surface states in mos... Process of reducing density of fast surface states in mos...

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H01L 21/471 (2006.01) H01L 21/28 (2006.01) H01L 21/314 (2006.01) H01L 21/318 (2006.01) H01L 21/324 (2006.01) H01L 23/29 (2006.01)

Patent

CA 1152227

ABSTRACT OF THE DISCLOSURE Fast surface states in MOS devices, such as SCCDs, are reduced by depositing a relatively thin amorphous layer containing silicon and hydrogen onto the SiO2 surface of such devices and annealing the resultant device in a non-oxidizing atmosphere for brief periods of time at a temperature in excess of the deposition temperature for the amorphous layer but below about 500°C so that free valences at the Si-SiO2 interface region are saturated with hydrogen. Surface state densities of about 4 x 108 cm-2 eV-1 and SCCDs having .epsilon. = 1.10-5 can be achieved via this process. The process is useful in producing SCCDs with low surface state densities and other MOS devices having low surface generated dark currents.

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