Processes for electron lithography

Details Processes for electron lithography Processes for electron lithography

H - Electricity

01

L

H01L 21/027 (2006.01) H01J 37/317 (2006.01)

Patent

CA 2107795

Projection lithographic systems relying on radiant energy such as electrons and ion beams are substantially affected by the distance between the projection mask and the substrate. In particular, to avoid undesirable limitation of the obtainable resolution, this distance should be a meter or less.

Les systèmes de lithographie par projection reposant sur l'énergie rayonnante comme les faisceaux d'électrons et d'ions sont affectés de manière substantielle par la distance entre le masque de projection et le substrat. Plus particulièrement, pour éviter de limiter indûment la résolution que l'on peut obtenir, cette distance devrait être d'un mètre ou moins.

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