Processing materials inside an atmospheric-pressure...

Details Processing materials inside an atmospheric-pressure... Processing materials inside an atmospheric-pressure...

C - Chemistry, Metallurgy

23

C

C23C 16/503 (2006.01) B08B 7/00 (2006.01) C23C 16/505 (2006.01) C23C 16/507 (2006.01) C23G 5/00 (2006.01) H01J 37/32 (2006.01) H01L 21/00 (2006.01)

Patent

CA 2437322

Apparatus (Fig.1,4) for the processing of materials involving placing a material (14, Fig.1) either placed between a radio-frequency electrode (13, Fig.1) and a ground electrode (11, Fig.1), or which is itself one of the electrodes (Fig.2). This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

L'invention concerne un appareil (Fig.1,4) permettant de traiter des matériaux. Selon l'invention, on place un matériau (14, Fig.1) à traiter entre une électrode (13, Fig.1) à fréquence radio et une électrode de masse (11, Fig.1), ou bien ledit matériau constitue lui-même une des électrodes (Fig.2). Le traitement se fait dans des conditions de pression atmosphérique. Cet appareil décape ou nettoie efficacement des substrats, tels que des tranches de silicium, ou bien effectue le nettoyage de bobines et de tambours, et il fonctionne avec un gaz contenant un gaz inerte et un gaz chimiquement réactif.

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