G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 7/00 (2006.01) G03F 7/16 (2006.01) G03F 7/20 (2006.01) H01L 21/027 (2006.01) H01L 21/28 (2006.01)
Patent
CA 2072617
2072617 9205473 PCTABS00011 A semiconductor mesa structure (20) is covered with a photoresist material (22) in a localized flooding manner such that the photoresist material (22) is thinner on the top of the mesas (21) and also at the uppermost portion of the sidewalls than at the base of the mesa (21) and the intervening channel. The photoresist (22) is then exposed through a mask (23) in a manner so that when developed, the photoresist (22) from the mesa (21) top and uppermost portion of the sidewall can be removed. When the photoresist (22) is exposed to the actinic radiation, the thinner photoresist (22) is adequately exposed more rapidly than the thicker portion nearer the bottom of the mesa (21), if the mask (23) does not adequately shield the actinic radiation from reaching it. Thus the alignment tolerance is greater than if the photoresist (22) were of uniform thickness.
Crawford F. David
Holmstrom Roger P.
Meland Edmund
Crawford F. David
Gte Laboratories Incorporated
Holmstrom Roger P.
Meland Edmund
R. William Wray & Associates
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