Processing microchips

H - Electricity – 01 – L

Patent

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Details

H01L 21/60 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01)

Patent

CA 2087429

2087429 9202038 PCTABS00010 Uniaxially conductive connector formed in situ on microchip by laser drilling an insulating layer at least 5 micrometres thick to provide holes communicating with the chip bonding sites, and depositing metal in the holes to establish electrical connection with the bonding sites. Excimer U.V. laser ablation of a polyimide insulating layer is preferred, followed by removal of a surface layer (preferably of amorphous polyamide) from the insulating layer to expose the ends of the metal deposited in the holes.

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