Producing p-type conductivity in self-compensating...

Details Producing p-type conductivity in self-compensating... Producing p-type conductivity in self-compensating...

C - Chemistry, Metallurgy

30

B

356/197, 148/2.8

C30B 1/00 (2006.01) H01L 21/265 (2006.01) H01L 29/20 (2006.01) H01L 29/205 (2006.01) H01L 29/207 (2006.01) H01L 33/00 (2006.01) H01S 5/323 (2006.01)

Patent

CA 1077812

Abstract of the Disclosure P-type self-compensated semiconductor materials and a process for producing them are described. The process includes imparting a region of P-type conductivity to the body of a self-compensated compound semi- conductor material by the steps of preparing a crystal body of nor- mally N-type self-compensated compound semiconductor material and bombarding said crystal body with charged particles such as beryllium ions.

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