Production of cationically homogeneous refractory oxides of...

C - Chemistry – Metallurgy – 01 – B

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C01B 13/14 (2006.01) C01B 11/00 (2006.01) C01B 13/18 (2006.01) C01F 5/06 (2006.01) C01F 7/00 (2006.01) C01F 7/16 (2006.01) C01F 17/00 (2006.01) C01G 3/00 (2006.01) C01G 33/00 (2006.01) C01G 35/00 (2006.01) C01G 37/00 (2006.01) C01G 49/00 (2006.01) H01F 1/34 (2006.01) H01F 1/36 (2006.01)

Patent

CA 2131326

This invention relates to a generic process for producing a refractory oxide at a temperature below the melting point of the pure refractory oxide, by the steps of heating a fully hydrated halide or a hydrated halide-oxide dried cationically homogeneous nanostructured mixture to a temperature at which a cationically homogeneous nanostructured solid state hydroxyhalide is produced. The solid state hydroxyhalide is then heated to its decomposition-temperature, at which it decomposes, by heat alone, into a cationically homogeneous nanostructured solid state oxyhalide; and performing one of the following heating steps: (i) heating the solid state oxyhalide to a solid state oxyhalide decomposition-temperature at which it chemically decomposes, by heat alone, into a cationically homogeneous nanostructured solid state refractory oxide; or (ii) heating the solid state oxyhalide to a molten state decomposition-temperature at which it chemically decomposes, by heat alone, into a cationically homogeneous nanostructured solid state refractory oxide; or (iii) heating the solid state oxyhalide to a vapor state decomposition-temperature at which it chemically decomposes, by heat alone, into a cationically homogeneous nanostructured solid state refractory oxide.

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