C - Chemistry – Metallurgy – 10 – J
Patent
C - Chemistry, Metallurgy
10
J
48/26
C10J 3/46 (2006.01) C01B 3/52 (2006.01)
Patent
CA 1103929
PRODUCTION OF CLEAN HCN-FREE SYNTHESIS GAS (D#76,376-F) ABSTRACT Clean HCN-free synthesis gas is produced from raw synthesis gas leaving a partial-oxidation gas generator by a continuous process comprising the steps of partial cooling, scrubbing with condensate, cooling below the dew point by indirect heat exchange preferably with a rich liquid absorbent from a downstream acid-gas-removal zone, and scrubbing with cold aqueous absorbent. The rich HCN-containing aqueous absorbent is then safely processed, without polluting the environment. For example, the HCN- containing aqueous absorbent may be stripped or reacted in the gas generator. Optionally, other acid gases, if present, may be removed from the synthesis gas in said acid-gas- removal zone. -I-
329574
Smart & Biggar
Texaco Development Corporation
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