C - Chemistry – Metallurgy – 01 – G
Patent
C - Chemistry, Metallurgy
01
G
23/224
C01G 15/00 (2006.01)
Patent
CA 1068069
ABSTRACT OF THE DISCLOSURE A method for producing high purity gallium oxide, suitable for semiconductors, wherein gallium is reacted with water vapour, at a high temperature and a high pressure, in an autoclave lined with polytetrafluoro- ethylene or an equivalent material, followed by roasting of the thus produced hydroxide to provide gallium oxide.
250173
Fuchs Manfred
Pfundt Heimar
Voiss Paul
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