Production of semiconductor structures with buried resistive...

Details Production of semiconductor structures with buried resistive... Production of semiconductor structures with buried resistive...

H - Electricity

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H01L 21/324 (2006.01) H01L 21/265 (2006.01) H01L 21/266 (2006.01) H01L 21/74 (2006.01) H01L 21/76 (2006.01) H01L 21/8252 (2006.01)

Patent

CA 1217877

- 16 - THE PRODUCTION OF SEMICONDUCTOR STRUCTURES WITH BURIED RESISTIVE OR CONDUCTIVE REGIONS BY CONTROLLED ION BOMBARDMENT AND HEAT TREATMENT Abstract The property of Group III-V compound materials, whereby ion bombarded material becomes highly resistive but recovers its original low resistivity by annealing at a temperature which is dopant and material dependant, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.

466520

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