C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
C01B 31/36 (2006.01) C01B 33/025 (2006.01) C01B 33/12 (2006.01)
Patent
CA 2734407
The invention relates to a method for producing silicon by reacting silicon oxide at an elevated temperature, silicon carbide and, optionally, a second carbon source being added to the reaction mixture. The invention further relates to a composition that can be used in the disclosed method. The essential part of the invention is the use of silicon carbide as a reaction initiator and/or reaction accelerator during the production of silicon or, alternatively, in nearly equimolar amounts for the production of silicon.
L'invention concerne un procédé de fabrication de silicium par réaction d'oxyde de silicium à une température accrue, du carbure de silicium et éventuellement une seconde source de carbone étant ajoutés au mélange réactionnel. L'invention concerne en outre une composition pouvant être utilisée dans le procédé selon l'invention. L'invention repose sur l'utilisation de carbure de silicium comme amorceur de réaction et/ou accélérateur de réaction dans la fabrication de silicium ou, en variante, dans des quantités sensiblement équimolaires pour la fabrication de silicium.
Lang Juergen Erwin
Mueh Ekkehard
Rauleder Hartwig
Evonik Degussa Gmbh
Marks & Clerk
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