Production of solar-grade silicon from silicon dioxide

C - Chemistry – Metallurgy – 01 – B

Patent

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C01B 33/025 (2006.01) C01B 31/02 (2006.01)

Patent

CA 2739052

The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a purified silicon oxide using one or more pure carbon sources, the purified silicon oxide, which was purified as silicon oxide dissolved in an aqueous phase, having a content of other polyvalent metals or metal oxides, in relation to the silicon oxide, of less than or equal to 300 ppm, preferably less than 100 ppm, especially preferably less than 50 ppm and according to the invention less than 10 ppm of the other metals and being obtained advantageously by gel formation in alkaline conditions. The invention also relates to a formulation containing an activator and to the use of purified silicon oxide together with an activator for producing silicon.

L'invention concerne un procédé global de production de silicium pur apte à être utilisé comme silicium solaire, ce procédé comportant la réduction d'un oxyde de silicium purifié avec une ou plusieurs sources de carbone pures, l'oxyde de silicium ayant été purifié en tant qu'oxyde de silicium sensiblement dissout en phase aqueuse, et présentant, relativement à l'oxyde de silicium, une teneur en autres métaux polyvalents, ou bien en oxydes métalliques, inférieure ou égale à 300 ppm, de préférence inférieure à 100 ppm, mieux encore inférieure à 50 ppm, et selon l'invention inférieure à 10 ppm, ledit oxyde de silicium purifié étant avantageusement obtenu par formation en milieu alcalin. L'invention porte également sur une formulation comportant un activeur, et sur l'utilisation d'oxyde de silicium purifié avec un activeur pour produire du silicium.

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