C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
C01B 33/037 (2006.01) B01J 7/00 (2006.01) B01J 12/02 (2006.01) B01J 19/00 (2006.01) C01B 33/021 (2006.01) C01B 33/027 (2006.01) C01B 33/039 (2006.01)
Patent
CA 2316180
It is possible to produce high purity Si by heating solid SiO at a temperature of at least 1000°C and lower than 1730°C, for a disproportionation reaction in which the SiO solid is decomposed to liquid or solid Si and solid SiO2, and the produced Si is separated from the SiO2 and/or SiO. The SiO solid can be obtained by a process whereby a starting mixture of carbon C, silicon Si or ferrosilicon, or a combination thereof, with SiO2 is heated to generate SiO gas-containing gas, and the SiO-containing gas is cooled to produce SiO solid.
Selon l'invention, on peut obtenir du Si extrêmement pur en portant du SiO solide à une température de 1000 DEG C ou plus élevée, mais inférieure à 1730 DEG C, pour le convertir en Si liquide ou solide et en SiO2 par disproportionation, et en séparant le Si ainsi formé du SiO2 et/ou SiO. Le SiO solide à utiliser comme matériau de départ peut être préparé par chauffage d'un mélange comprenant au moins l'un des éléments choisis parmi le carbone (C), le silicium (Si) et le ferrosilicium, et du SiO2, pour produire un gaz contenant du SiO gazeux, et par refroidissement du gaz produit, ce refroidissement entraînant la formation de SiO solide.
Kiyose Akihito
Kondo Jiro
Nogami Atsushi
Shimada Haruo
Tokumaru Shinji
Goudreau Gage Dubuc
Nippon Steel Corporation
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