Programmable cell for use in programmable electronic arrays

Details Programmable cell for use in programmable electronic arrays Programmable cell for use in programmable electronic arrays

G - Physics

11

C

356/153, 352/82

G11C 11/40 (2006.01) H01L 27/24 (2006.01) H01L 29/68 (2006.01) H01L 29/861 (2006.01)

Patent

CA 1158782

ABSTRACT A programmable cell for use in programmable electronic arrays such as PROM devices, logic ar- rays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and substantially non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 20 volts or less, a current of 25 milliamps or less, for 1000 microseconds or less. The cells in the conductive state have a resistance of 500 ohms or less. The cells have a maximum permittable processing temperature of 200° centigrade or more and a storage temperature of 175° centigrade or more. The cells can be formed from chalcogenide elements, such as germanium tel- lurium and selenium or combination thereof. The cells also can be formed from tetrahedral elements, such as silicon, germanium and carbon or combina- tions thereof. Each cell in an array is a thin film deposited cell and includes an isolating device which can be a bipolar or MOS device or can be a thin film diode or transistor. The associated addressing circuitry also can be conventional bipolar or MOS devices or thin film deposited devices. The cells have a cell area of less than one square mil to provide a high cell packing density.

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