Programmable cell for use in programmable electronic arrays

Details Programmable cell for use in programmable electronic arrays Programmable cell for use in programmable electronic arrays

G - Physics

11

C

352/82

G11C 7/00 (2006.01) H01L 27/24 (2006.01) H01L 29/68 (2006.01) H01L 29/861 (2006.01) H01L 45/00 (2006.01)

Patent

CA 1181848

ABSTRACT An improved programmable cell (52, 68, 104, 172, 218) for use in programmable electronic arrays (50, 100, 154, 210, 250, 302) such as PROM devices (50, 100, 154), logic arrays, gate arrays (100, 210) and die interconnect arrays. The cells (52, 68, 104, 172, 218) have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells (52, 68, 104, 172, 218) have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 10 volts or less, a current of 25 milliamps or less, for 100 microseconds or less. The cells (52, 68, 104, 172, 218) in the conductive state have a resistance of 100 ohms or less. The cells (52, 68, 104, 172, 218) have a maximum permittable processing temperature of 400° centigrade or more and a storage temperature of 175° centigrade of more. The cells (52, 68, 104, 172, 218) are formed from doped silicon alloys (52, 68, 104, 172, 218) including at least hydrogen and/or fluorine and contain from about .1 to 5 percent dopant. The cells (52, 68, 104, 172, 218) can be plasma depos-

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